DCR1275SD
100
Table gives pulse power PGM in Watts
Pulse frequency Hz
Pulse width
µs
50
100
400
150
125
100
25
VFGM
100
200
500
1ms
150 150
150 150
150 150
150 100
100W
50W
20W
10W
10ms
20
-
-
10
5W
2W
Tj = 25˚C
Tj = 125˚C
Tj = -40˚C
1
0.1
0.001
0.01
0.1
1
10
IFGM
Gate trigger current, IGT - (A)
Fig.3 Gate characteristics
1.0
Conduction Effective thermal resistance
Junction to case ˚C/W
Double side
0.020
Anode side
0.036
d.c.
Halfwave
0.022
0.038
3 phase 120˚
6 phase 60˚
0.024
0.027
0.040
0.043
0.1
Anode side cooled
Double side cooled
0.01
0.001
0.001
0.01
0.1
Time - (s)
1
10
Fig.4 Maximum (limit) transient thermal impedance - junction to case
6/9
DYNEX [ Dynex Semiconductor ]
