DCR1275SD
DYNAMIC CHARACTERISTICS
Symbol
IRRM/IDRM
dV/dt
Parameter
Conditions
Typ.
Max. Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125oC
-
-
-
-
-
-
150
300
mA
V/µs
A/µs
A/µs
V
Maximum linear rate of rise of off-state voltage To 67% VDRM T = 125oC.
j
Repetitive 50Hz
Non-repetitive
100
From 67% VDRM to 1000A
dI/dt
Rate of rise of on-state current
Gate source 10V, 5Ω
tr = 1µs, Tj = 125oC
150
Threshold voltage
At Tvj = 125oC
At Tvj = 125oC
0.92
0.276
VT(TO)
rT
tgd
On-state slope resistance
mΩ
VD = 67% VDRM, Gate source 30V, 15Ω
tr = 0.5µs, Tj = 25oC
Delay time
-
1.5
µs
µs
IT = 1000A, tp = 1ms, Tj = 125˚C,
VR = 50V, dIRR/dt = 20A/µs,
tq
Turn-off time
500
650
VDR = 67% VDRM, dVDR/dt = 20V/µs linear
IL
Latching current
Holding current
Tj = 25oC, VD = 5V
300
200
1000
500
mA
mA
IH
Tj = 25oC, Rg-k = ∞
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
VGT
Parameter
Gate trigger voltage
Conditions
VDRM = 5V, Tcase = 25oC
Max. Units
4.0
V
VDRM = 5V, Tcase = 25oC
400
mA
IGT
Gate trigger current
VGD
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
At VDRM Tcase = 125oC
0.25
30
V
V
VFGM
VFGN
VRGM
IFGM
Anode positive with respect to cathode
Anode negative with respect to cathode
0.25
5
V
V
Anode positive with respect to cathode
See table, fig.4
10
A
PGM
100
5
W
W
PG(AV)
Mean gate power
3/9
DYNEX [ Dynex Semiconductor ]
