DCR1275SD
CURRENT RATINGS
Tcase = 80˚C unless stated otherwise.
Symbol
Parameter
Conditions
Max.
Units
Double Side Cooled
Half wave resistive load
1185
1860
1640
A
A
A
IT(AV)
IT(RMS)
IT
Mean on-state current
RMS value
-
-
Continuous (direct) on-state current
Single Side Cooled (Anode side)
IT(AV)
IT(RMS)
IT
Mean on-state current
RMS value
Half wave resistive load
805
1265
1035
A
A
A
-
-
Continuous (direct) on-state current
SURGE RATINGS
Parameter
Conditions
10ms half sine; Tcase = 125oC
VR = 50% VRRM - 1/4 sine
10ms half sine; Tcase = 125oC
VR = 0
Max.
22.5
Units
kA
Symbol
ITSM
I2t
Surge (non-repetitive) on-state current
I2t for fusing
2.53 x 106
28.0
A2s
kA
Surge (non-repetitive) on-state current
I2t for fusing
ITSM
I2t
3.92 x 106
A2s
THERMAL AND MECHANICAL DATA
Conditions
Min.
Max. Units
0.020 oC/W
0.036 oC/W
Parameter
Symbol
dc
-
-
Double side cooled
Rth(j-c)
Anode dc
Thermal resistance - junction to case
Single side cooled
Cathode dc
Double side
-
0.044 oC/W
0.004 oC/W
-
Clamping force 22.0kN
with mounting compound
Thermal resistance - case to heatsink
Virtual junction temperature
Rth(c-h)
Single side
-
-
0.008
135
oC/W
oC
On-state (conducting)
Reverse (blocking)
Tvj
-
125
oC
Tstg
-
Storage temperature range
Clamping force
-55
125
oC
20.0
24.0
kN
2/9
DYNEX [ Dynex Semiconductor ]
