ZXMN6A08G
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Static
Symbol
Min.
Typ.
Max.
Unit Conditions
Drain-source breakdown
voltage
V
60
V
I = 250A, V =0V
D GS
(BR)DSS
Zero gate voltage drain
current
I
0.5
A
V
= 60V, V =0V
GS
DSS
DS
Gate-body leakage
I
100
nA
V
V
= 20V, V =0V
DS
GSS
GS
Gate-source threshold
voltage
V
1
I = 250A, V =V
D DS GS
GS(th)
Static drain-source on-state
R
0.080
0.150
⍀
⍀
S
V
= 10V, I = 4.8A
D
DS(on)
GS
GS
DS
(*)
resistance
V
V
= 4.5V, I = 4.2A
D
(*) (‡)
g
6.6
= 15V, I = 4.8A
D
fs
Forward transconductance
(‡)
Dynamic
Input capacitance
C
C
C
459
44.2
24.1
pF
pF
pF
V
= 40V, V =0V
DS GS
iss
f=1MHz
Output capacitance
oss
rss
Reverse transfer capacitance
(†) (‡)
Switching
Turn-on delay time
Rise time
t
t
t
t
2.6
2.1
ns
ns
ns
ns
nC
V
= 30V, I = 1.5A
DD D
d(on)
R ≅6.0⍀, V = 10V
G
GS
r
Turn-off delay time
Fall time
12.3
4.6
d(off)
f
Gate charge
Q
4.0
V
= 30V, V = 5V
DS GS
g
I = 1.4A
D
Total gate charge
Gate-source charge
Gate drain charge
Q
Q
Q
5.8
1.4
1.9
nC
nC
nC
V
= 30V, V = 10V
DS GS
g
I = 1.4A
D
gs
gd
Source-drain diode
(*)
V
0.88
1.2
V
T =25°C, I = 4A,
j S
SD
Diode forward voltage
V
=0V
GS
(‡)
t
19.2
30.3
ns
Tj=25°C, I = 1.4A,
di/dt=100A/s
rr
S
Reverse recovery time
(‡)
Q
nC
rr
Reverse recovery charge
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
DIODES [ DIODES INCORPORATED ]
