ZXMN6A08G
60V SOT223 N-channel enhancement mode MOSFET
Summary
V
R
(⍀)
I (A)
(BR)DSS
DS(on)
D
0.080 @ V
= 10V
5.3
2.8
GS
60
0.150 @ V
= 4.5V
GS
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
D
S
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
G
Low gate drive
SOT223 package
Applications
•
•
•
•
DC-DC converters
S
D
G
Power management functions
Disconnect switches
Motor control
D
Ordering information
Pinout - top view
Device
Reel size
(inches)
Tape width
(mm)
Quantity per
reel
ZXMN6A08GTA
ZXMN6A08GTC
7
12
12
1,000
4,000
13
Device marking
ZXMN
6A08
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com
DIODES [ DIODES INCORPORATED ]
