ZXMN6A08G
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
V
60
V
DSS
Gate-source voltage
V
20
V
A
GS
(b)
(b)
(a)
I
5.3
Continuous drain current
@ V = 10V; T
= 25°C
= 70°C
= 25°C
D
GS
amb
amb
amb
4.2
3.8
@ V = 10V; T
GS
@ V = 10V; T
GS
(c)
I
I
20
2.1
20
2
A
A
Pulsed drain current
DM
(b)
I
S
Continuous source current (body diode)
(c)
A
Pulsed source current (body diode)
SM
(a)
P
W
D
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
= 25°C
amb
16
mW/°C
W
(b)
P
3.9
D
= 25°C
amb
31
mW/°C
°C
Operating and storage temperature range
T , T
-55 to +150
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
R
62.5
°C/W
⍜JA
⍜JA
Junction to ambient
(b)
32
°C/W
Junction to ambient
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b)For a device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.
Issue 1 - May 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
DIODES [ DIODES INCORPORATED ]
