ZXMN6A11Z
Electrical characteristics (@ T
= 25°c unless otherwise stated)
amb
Parameter
Static
Symbol
Min. Typ. Max. Unit Conditions
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
V
60
V
A
nA
V
I = 250A, V =0V
D GS
(BR)DSS
I
I
1.0
V
= 60V, V =0V
GS
DSS
DS
GS
100
V
= 20V, V =0V
DS
GSS
Gate-source threshold voltage
Static drain-source on-state
V
R
1.0
I = 250A, V =V
D DS GS
GS(th)
DS(on)
0.120
0.180
⍀
V
= 10V, I = 2.5A
D
GS
GS
DS
(*)
resistance
⍀
V
V
= 4.5V, I = 2A
D
(*)(‡)
g
4.9
S
= 15V, I = 2.5A
Forward transconductance
fs
D
(‡)
Dynamic
Input capacitance
C
330
35.2
17.1
pF
pF
pF
V
= 40V, V =0V
DS GS
iss
f=1MHz
Output capacitance
C
oss
rss
Reverse transfer capacitance
C
(†) (‡)
Switching
Turn-on-delay time
Rise time
t
t
t
t
1.95
3.5
8.2
4.6
3.0
ns
ns
ns
ns
nC
V
= 30V, I = 2.5A
DD D
d(on)
R ≅6.0⍀, V = 10V
G
GS
r
Turn-off delay time
Fall time
d(off)
f
Gate charge
Q
V
= 15V, V = 5V
DS GS
g
I = 2.5A
D
Total gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Q
Q
Q
5.7
nC
nC
nC
V
= 15V, V = 10V
DS GS
g
I = 2.5A
D
1.25
0.86
gs
gd
(*)
V
0.85 0.95
V
T =25°C, I = 2.8A,
Diode forward voltage
SD
j
S
V
=0V
GS
(‡)
t
21.5
20.5
ns T =25°C, I = 2.5A,
j S
Reverse recovery time
rr
di/dt=100A/s
(‡)
Q
nC
Reverse recovery charge
rr
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300s; duty cycle Յ2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Issue 2 - September 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
DIODES [ DIODES INCORPORATED ]
