ZXMN6A11Z
Absolute maximum ratings
Parameter
Symbol
V
Limit
Unit
Drain-source voltage
60
V
DSS
Gate-source voltage
V
20
V
A
GS
(b)
(b)
(a)
I
3.6
Continuous drain current @ V = 10V; T
=25°C
=70°C
=25°C
D
GS
amb
amb
amb
2.9
2.7
@ V = 10V; T
GS
@ V = 10V; T
GS
(c)
I
14.5
3.7
A
A
Pulsed drain current
DM
(b)
I
Continuous source current (body diode)
S
(c)
I
14.5
1.5
A
Pulsed source current (body diode)
SM
(a)
P
W
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
=25°C
D
amb
12
mW/°C
W
(b)
P
2.6
=25°C
D
amb
21
mW/°C
°C
Operating and storage temperature range
T , T
-55 to +150
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
83.3
°C/W
Junction to ambient
⍜JA
(b)
R
47.4
°C/W
Junction to ambient
⍜JA
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b)For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300s - pulse width limited by maximum junction
temperature.
Issue 2 - September 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
DIODES [ DIODES INCORPORATED ]
