ZXMN6A11Z
60V SOT89 N-channel enhancement mode MOSFET
Summary
V
R
(⍀)
I (A)
(BR)DSS
DS(on)
D
0.120 @ V = 10V
3.6
2.9
GS
60
0.180 @ V = 4.5V
GS
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
D
S
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
G
Low gate drive
SOT89 package
Applications
•
•
•
•
DC-DC converters
Power management functions
Disconnect switches
Motor control
S
D
G
D
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity per
reel
Top view
ZXMN6A11ZTA
7
12
1,000
Device marking
11N6
Issue 2 - September 2006
© Zetex Semiconductors plc 2006
1
www.zetex.com