DMB53D0UV
NPN Transistor
1,000
T
A
= 150
°
C
T
A
= 25
°
C
0.4
I
C
I
B
= 20
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
h
FE,
DC CURRENT GAIN
0.3
100
T
A
= -50
°
C
0.2
T
A
= 150°C
T
A
= 25°C
10
0.1
T
A
= -50°C
1
100
1,000
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 10 Typical DC Current Gain vs. Collector Current
1
1,000
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
V
CE
= 5V
0
0.1
1,000
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 11 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
100
10
1
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 12 Typical Gain-Bandwidth Product
vs. Collector Current
100
Ordering Information
Part Number
DMB53D0UV-7
Notes:
(Note 5)
Case
SOT-563
Packaging
3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
MB1 = Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
MB1 YM
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
Feb
2
2009
W
Mar
3
2010
X
Apr
4
May
5
2011
Y
Jun
6
2012
Z
Jul
7
Aug
8
2013
A
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
DMB53D0UV
Document number: DS31651 Rev. 6 - 2
5 of 7
December 2009
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
