DMB53D0UV
MOSFET
0.8
0.7
0.6
0.5
V
GS
= 3.0V
V
GS
= 10V
0.5
V
DS
= 10V
0.4
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
T
A
= 85°C
T
A
= 25°C
0.3
T
A
= -55°C
T
A
= 150°C
T
A
= 125°C
0.4
0.3
0.2
0.1
0
0
0.5
1
V
GS
= 1.5V
V
GS
= 1.0V
V
GS
= 2.5V
0.2
0.1
0
5
0
1
2
3
V
GS
, GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
10
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
1.5 2 2.5 3 3.5 4 4.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
4
10
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
V
GS
= 2.5V
T
A
= 25°C
V
GS
= 4.0V
T
A
= -55°C
1
0.001
1
0
0.2
0.3
0.4
0.5
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
0.1
0.01
0.1
I
D
, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1
2.0
1.8
R
DS(ON)
, DRAIN-TO-SOURCE
RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
V
GS
= 4V
I
D
= 100mA
35
30
C, CAPACITANCE (pF)
25
20
f = 1MHz
C
iss
V
GS
= 2.5V
I
D
= 80mA
15
10
5
0
0
V
GS
= 0V
C
oss
C
rss
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Capacitance
40
DMB53D0UV
Document number: DS31651 Rev. 6 - 2
3 of 7
December 2009
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
