DMB53D0UV
MOSFET (continued)
1.1
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1.0
1
I
S
, SOURCE CURRENT (A)
0.1
0.9
I
D
= 250µA
T
A
= 150°C
0.8
0.01
T
A
= 125°C
T
A
= 85°C
0.7
0.001
T
A
= 25°C
T
A
= -55°C
0.6
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0.5
-50
0.0001
0.1
0.3
0.5
0.7
0.9
1.1
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
R
θJA
= 500
°
C/W
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 9 Derating Curve - Total Package Power Dissipation
0
-50
DMB53D0UV
Document number: DS31651 Rev. 6 - 2
4 of 7
December 2009
© Diodes Incorporated