BSS8402DW
P-CHANNEL – BSS84 SECTION
-600
T
A
= 25
°
C
-1.0
I
D
, DRAIN-SOURCE CURRENT (mA)
-500
I
D
, DRAIN CURRENT (A)
-0.8
NEW PRODUCT
-400
-0.6
-300
-0.4
-200
-100
-0.2
0
-2
-3
-4
-5
V
DS
, DRAIN-SOURCE (V)
Fig. 7 Drain-Source Current vs. Drain-Source Voltage
10
9
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
-0.0
0
-1
0
-5
-1
-2
-3
-4
-6
-7
-8
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Fig. 8 Drain Current vs. Gate-Source Voltage
15
V
GS
= -10V
I
D
= -0.13A
7
6
5
4
3
2
T
A
= 125
°
C
R
DS
, ON-RESISTANCE (
Ω
)
T
A
= 25
°
C
8
12
9
6
3
1
0
0
-1
-2
-4
-5
-3
V
GS
, GATE TO SOURCE (V)
Fig. 9 On-Resistance vs. Gate-Source Voltage
0
-50
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Fig. 10 On-Resistance vs. Junction Temperature
-25
25.0
20.0
R
DS
, ON-RESISTANCE (
Ω
)
V
GS
= -3.5V
V
GS
= -3V
15.0
V
GS
= -5V
10.0
V
GS
= -4V
V
GS
= -6V
5.0
V
GS
= -8V
V
GS
= -10V
0.0
-0.0
-0.4
-0.6
-0.8
I
D
, DRAIN CURRENT (A)
Fig. 11 On-Resistance vs. Drain Current
-0.2
1.0
BSS8402DW
Document number: DS30380 Rev. 12 - 2
4 of 5
www.diodes.com
June 2008
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
