BSS8402DW
Electrical Characteristics N-CHANNEL – Q
1
, 2N7002 Section
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ T
C
= 25°C
@ T
C
= 125°C
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
@ T
j
= 25°C
@ T
j
= 125°C
R
DS (ON)
I
D(ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
60
⎯
⎯
1.0
⎯
0.5
80
⎯
⎯
⎯
⎯
⎯
Typ
70
⎯
⎯
⎯
3.2
4.4
1.0
⎯
22
11
2.0
7.0
11
@T
A
= 25°C unless otherwise specified
Unit
V
µA
nA
V
Ω
A
mS
pF
pF
pF
ns
ns
Test Condition
V
GS
= 0V, I
D
= 10μA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 10V, I
D
= 0.5A
V
GS
= 10V, V
DS
= 7.5V
V
DS
=10V, I
D
= 0.2A
Max
⎯
1.0
500
±10
2.5
7.5
13.5
⎯
⎯
50
25
5.0
20
20
NEW PRODUCT
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
V
DS
= 25V, V
GS
= 0V, f = 1.0MHz
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150Ω, V
GEN
= 10V, R
GEN
= 25Ω
Electrical Characteristics P-CHANNEL – Q
2
, BSS84 Section
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
5. Short duration pulse test used to minimize self-heating effect.
@ T
A
= 25°C unless otherwise specified
Unit
V
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -50V, V
GS
= 0V, T
J
= 25°C
V
DS
= -50V, V
GS
= 0V, T
J
= 125°C
V
DS
= -25V, V
GS
= 0V, T
J
= 25°C
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -1mA
V
GS
= -5V, I
D
= -0.100A
V
DS
= -25V, I
D
= -0.1A
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
-50
⎯
⎯
⎯
⎯
-0.8
⎯
.05
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
10
18
Max
⎯
-15
-60
-100
±10
-2.0
10
⎯
45
25
12
⎯
⎯
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
V
DD
= -30V, I
D
= -0.27A,
R
GEN
= 50Ω, V
GS
= -10V
BSS8402DW
Document number: DS30380 Rev. 12 - 2
2 of 5
www.diodes.com
June 2008
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
