BSS8402DW
N-CHANNEL – 2N7002 SECTION
1.0
I
D
, DRAIN-SOURCE CURRENT (A)
7
T
j
= 25
°
C
0.8
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
6
5
4
3
2
1
0
NEW PRODUCT
0.6
0.4
0.2
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
5
0
0.4
0.6
0.8
I
D
, DRAIN CURRENT (A)
Fig. 2 On-Resistance vs. Drain Current
0.2
1.0
3.0
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
6
2.5
R
DS(ON)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
5
4
2.0
3
2
1.5
V
GS
= 10V,
I
D
= 200mA
1
1.0
-55
-30
-5
20
45
70 95
120 145
T
j
, JUNCTION TEMPERATURE (
°
C)
Fig. 3 On-Resistance vs. Junction Temperature
0
0
2
4
6
8
10 12 14 16 18
V
GS
, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
10
9
V
GS,
GATE-SOURCE CURRENT (V)
8
7
6
5
4
3
2
1
0
0
0.4
0.8
0.6
I
D
, DRAIN CURRENT (A)
Fig. 5 Typical Transfer Characteristics
0.2
1
V
DS
= 10V
250
P
d
, POWER DISSIPATION (mW)
200
150
100
50
0
50
75
100 125 150 175 200
25
T
A
, AMBIENT TEMPERATURE (
°
C)
Fig. 6 Max Power Dissipation vs. Ambient Temperature
0
BSS8402DW
Document number: DS30380 Rev. 12 - 2
3 of 5
www.diodes.com
June 2008
© Diodes Incorporated
DIODES [ DIODES INCORPORATED ]
