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BSS138DW 参数 Datasheet PDF下载

BSS138DW图片预览
型号: BSS138DW
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 5 页 / 109 K
品牌: DIODES [ DIODES INCORPORATED ]
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BSS138DW
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
6
V
GS
= 4.5V
3.5
V
GS
= 10V
150
°
C
150
°
C
5
3
2.5
2
25
°
C
4
3
25
°
C
1.5
1
-55
°
C
2
1
-55
°
C
0.5
0
0
0
0
0.5
I
D
, DRAIN-CURRENT (A)
Fig. 7 Drain-Source On-Resistance vs. Drain-Current
0.5
I
D
, DRAIN-CURRENT (A)
Fig. 8 Drain-Source On-Resistance vs. Drain-Current
1
100
V
GS
= 0V
f = 1MHz
I
D
, DIODE CURRENT (A)
0.1
150
°
C
-55
°
C
C, CAPACITANCE (pF)
C
iss
10
C
oss
0.01
25
°
C
C
rss
0.001
1
0
0.2
0.6
1
1.2
0.4
0.8
V
SD
, DIODE FORWARD VOLTAGE (V)
Fig. 9 Body Diode Current vs. Body Diode Voltage
0
5
15
20
25
10
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Capacitance vs. Drain-Source Voltage
Ordering Information
Part Number
BSS138DW-7-F
Notes:
(Note 7)
Case
SOT-363
Packaging
3000/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K38
YM
Date Code Key
Year
Code
Month
Code
1998
J
Jan
1
1999
K
Feb
2
2000
L
Mar
3
2001
M
YM
K38
2002
N
Apr
4
P
K38 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: N = 2002)
M = Month (ex: 9 = September)
2003
2004
R
Jun
6
2005
S
2006
T
Jul
7
2007
U
Aug
8
2008
V
Sep
9
2009
W
Oct
O
2010
X
2011
Y
Nov
N
2012
Z
Dec
D
May
5
BSS138DW
Document number: DS30203 Rev. 12 - 2
3 of 5
September 2009
© Diodes Incorporated