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BSS138DW 参数 Datasheet PDF下载

BSS138DW图片预览
型号: BSS138DW
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 5 页 / 109 K
品牌: DIODES [ DIODES INCORPORATED ]
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BSS138DW
0.6
I
D
, DRAIN-SOURCE CURRENT (A)
0.5
T
j
= 25
°
C
V
GS
= 3.5V
0.8
0.7
V
DS
= 1V
-55
°
C
V
GS
= 3.25V
I
D
, DRAIN-SOURCE CURRENT (A)
0.6
0.5
25
°
C
0.4
V
GS
= 3.0V
150
°
C
0.3
V
GS
= 2.75V
0.4
0.3
0.2
0.1
0
0
0.2
V
GS
= 2.5V
0.1
0
7
3
4
5
6
8
9 10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
0
1
2
0.5 1
1.5
2
2.5
3 3.5 4
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Transfer Characteristics
4.5
2.45
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
25
50
75
100 125 150
-25
T
j
, JUNCTION TEMPERATURE (°C)
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
0
-55
R
DS(ON)
, NORMALIZED DRAIN-SOURCE
ON-RESISTANCE (
Ω
)
2.25
2.05
1.85
1.65
1.45
1.25
1.05
0.85
0.65
-55
45
145
95
-5
T
j
, JUNCTION TEMPERATURE (°C)
Fig. 3 Drain-Source On Resistance vs. Junction Temperature
V
GS
= 4.5V
I
D
= 0.075A
V
GS
= 10V
I
D
= 0.5A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
8
V
GS
= 2.5V
150
°
C
9
V
GS
= 2.75V
7
6
5
4
3
-55
°
C
25
°
C
8
7
150
°
C
6
5
4
25
°
C
3
2
-55
°
C
2
1
0
0
1
0
0.2
0.25
0.1
0.15
I
D
, DRAIN-CURRENT (A)
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
0
0.05
0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16
I
D
, DRAIN-CURRENT (A)
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
BSS138DW
Document number: DS30203 Rev. 12 - 2
2 of 5
September 2009
© Diodes Incorporated