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BSS138DW 参数 Datasheet PDF下载

BSS138DW图片预览
型号: BSS138DW
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 5 页 / 109 K
品牌: DIODES [ DIODES INCORPORATED ]
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BSS138DW
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Available in Lead Free/RoHS Compliant Version (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Notes 5 and 6)
Mechanical Data
SOT-363
D
2
G
1
S
1
Case: SOT-363
Case Material: Molded Plastic. “Green” Molding Compound
(Note 6). UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating) Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
S
2
G
2
D
1
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings
Drain-Source Voltage
Drain-Gate Voltage (Note 3)
Gate-Source Voltage
Drain Current (Note 1)
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
DGR
V
GSS
I
D
BSS138DW
50
50
±20
200
Units
V
V
V
mA
Characteristic
Continuous
Continuous
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Symbol
P
D
R
θ
JA
T
J
, T
STG
BSS138DW
200
625
-55 to +150
Units
mW
°C/W
°C
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
1.
2.
3.
4.
5.
6.
@T
A
= 25°C unless otherwise specified
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
g
FS
C
iss
C
oss
C
rss
t
D(ON)
t
D(OFF)
Min
50
0.5
100
Typ
75
1.2
1.4
Max
0.5
±100
1.5
3.5
50
25
8.0
20
20
Unit
V
µA
nA
V
Ω
mS
pF
pF
pF
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 50V, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 0.22A
V
DS
=25V, I
D
= 0.2A, f = 1.0KHz
V
DS
= 10V, V
GS
= 0V, f = 1.0MHz
V
DD
= 30V, I
D
= 0.2A,
R
GEN
= 50Ω
Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Short duration pulse test used to minimize self-heating effect.
R
GS
20KΩ.
No purposefully added lead.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Product manufactured with Date Code UO (week 40, 2007) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code UO are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
BSS138DW
Document number: DS30203 Rev. 12 - 2
1 of 5
www.diodes.com
September 2009
© Diodes Incorporated