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DTU1N60 参数 Datasheet PDF下载

DTU1N60图片预览
型号: DTU1N60
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET可在磁带和卷轴 [Power MOSFET Available in Tape and Reel]
分类和应用:
文件页数/大小: 12 页 / 4091 K
品牌: DINTEK [ DinTek Semiconductor Co,.Ltd ]
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Package Information  
www.din-tek.jp  
TO-252AA (HIGH VOLTAGE)  
E
b3  
E1  
L3  
D1  
D
H
L4  
b2  
b
A
c2  
e
A1  
L
L1  
c
θ
L2  
MILLIMETERS  
INCHES  
DIM.  
E
MIN.  
MAX.  
6.73  
1.77  
MIN.  
0.252  
0.055  
MAX.  
0.265  
0.070  
6.40  
1.40  
L
L1  
L2  
L3  
L4  
D
2.743 REF  
0.508 BSC  
0.108 REF  
0.020 BSC  
0.89  
0.64  
6.00  
9.40  
0.64  
0.77  
5.21  
1.27  
1.01  
6.22  
10.40  
0.88  
1.14  
5.46  
0.035  
0.025  
0.236  
0.370  
0.025  
0.030  
0.205  
0.050  
0.040  
0.245  
0.409  
0.035  
0.045  
0.215  
H
b
b2  
b3  
e
2.286 BSC  
0.090 BSC  
A
2.20  
0.00  
0.45  
0.45  
5.30  
4.40  
0'  
2.38  
0.13  
0.60  
0.58  
-
0.087  
0.000  
0.018  
0.018  
0.209  
0.173  
0'  
0.094  
0.005  
0.024  
0.023  
-
A1  
c
c2  
D1  
E1  
θ
-
-
10'  
10'  
ECN: S-81965-Rev. A, 15-Sep-08  
DWG: 5973  
Notes  
1. Package body sizes exclude mold flash, protrusion or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side.  
2. Package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, gate burrs and interlead flash, but  
including any mismatch between the top and bottom of the plastic body.  
3. The package top may be smaller than the package bottom.  
4. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimension at maximum  
material condition. The dambar cannot be located on the lower radius of the foot.  
1