DTL1N60/DTP1N60/DTU1N60
www.din-tek.jp
10000
1000
100
10
10
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
ds
= C
gd
= C + C
ds
gd
°
T = 150 C
J
C
iss
1
C
oss
°
T = 25 C
J
C
rss
V
= 0 V
GS
1
0.1
A
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
100
I
D
= 1.4A
OPERATION IN THIS AREA LIMITED
V
V
V
= 480V
= 300V
= 120V
BY R
DS
DS
DS
DS(on)
16
12
8
10
10us
100us
1
1ms
4
°
T = 25 C
J
C
°
T = 150 C
FOR TEST CIRCUIT
SEE FIGURE 13
10ms
1000
Single Pulse
0.1
0
10
100
10000
0
2
4
6
8
10
12
14
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
Fig. 8 - Maximum Safe Operating Area
G
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
4
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