TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
2.3
www.din-tek.jp
DTP3006
I
D
= 250 μA
2.0
I
S
- Source Current (A)
10
T
J
= 150
°C
V
GS(th)
(V)
1.7
1
T
J
= 25
°C
1.4
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
1.1
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
Threshold Voltage
4300
51
I
D
= 250 μA
3440
C - Capacitance (pF)
C
iss
2580
V
DS
(V) Drain-to-Source Voltage
49
47
1720
45
860
C
rss
0
0
C
oss
10
20
30
V
DS
- Drain-to-Source Voltage (V)
40
43
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
Capacitance
2.2
I
D
= 14 A
R
DS(on)
- On-Resistance (Normalized)
Drain Source Breakdown vs. Junction Temperature
40
1.9
V
GS
= 10 V
30
1.6
V
GS
= 4.5 V
I
D
- Drain Current (A)
150
20
1.3
10
1.0
0.7
- 50
0
- 25
0
25
50
75
100
125
0
25
T
J
- Junction Temperature (°C)
50
75
100
T
C
- Case Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
Current Derating
4
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