P-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
- 60
R
DS(on)
() Max.
0.0600 at V
GS
= - 10 V
0.0850 at V
GS
= - 4.5 V
I
D
(A)
- 30
- 24
Q
g
(Typ.)
67
www.din-tek.jp
DTP3006
•
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET
®
Power MOSFET
• 100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
TO-220AB
S
• Power Switch
• Load Switch in High Current Applications
• DC/DC Converters
G
D
G D S
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (t = 300 µs)
Avalanche Current
Single Avalanche Energy
a
Maximum Power
Dissipation
a
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
c
T
C
= 25 °C
T
C
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
Limit
- 60
± 20
- 30
- 29
- 100
- 32
51
41.7
b
2.1
- 55 to 150
mJ
W
°C
A
Unit
V
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
Notes:
a. Duty cycle
1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
Symbol
R
thJA
R
thJC
Limit
60
3
Unit
°C/W
1
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