TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
R
DS(on)
- On-Resistance (Normalized)
2.0
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DTM4483
V
GS
-
Gate-to-Source
Voltage (V)
8
I
D
= 10 A
1.7
I
D
= 10 A
V
GS
= 10 V
V
DS
= 15 V
6
1.4
4
1.1
V
GS
= 4.5 V
2
0.8
0
0
20
40
60
80
100
Q
g
- Total
Gate
Charge (nC)
0.5
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
0.10
10
I
S
-
Source
Current (A)
T
J
= 150
°C
1
T
J
= 25
°C
0.1
0.08
R
DS(on)
- On-Resistance (Ω)
0.06
0.04
0.01
0.02
T
J
= 25
°C
T
J
= 150
°C
0.001
0.0
0.00
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-to-Drain
Voltage (V)
1.2
0
2
4
6
8
10
V
GS
-
Gate-to-Source
Voltage (V)
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.0
- 30
I
D
= 1 mA
V
DS
- Drain-to-Source Voltage (V)
0.7
I
D
= 250 μA
V
GS(th)
Variance (V)
0.4
I
D
= 5 mA
0.1
- 32
- 34
- 36
- 0.2
- 38
- 0.5
- 50 - 25
0
25
50
75
100
125
150
175
- 40
- 50 - 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
T
J
- Junction Temperature (°C)
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
4
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