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DTM4483 参数 Datasheet PDF下载

DTM4483图片预览
型号: DTM4483
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道30 V ( DS ) MOSFET ESD保护: 3000 V [P-Channel 30 V (D-S) MOSFET ESD Protection: 3000 V]
分类和应用:
文件页数/大小: 9 页 / 1735 K
品牌: DINTEK [ DinTek Semiconductor Co,.Ltd ]
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TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
10
-2
10
-3
0.004
I
GSS
-
Gate
Current (A)
www.din-tek.jp
DTM4483
0.005
T
J
= 25 °C
I
GSS
-
Gate
Current (A)
10
-4
10
-5
10
-6
10
-7
T
J
= 25
°C
0.003
T
J
= 150
°C
0.002
10
-8
10
-9
0.001
0.000
0
7
14
21
28
35
V
GS
-
Gate-to-Source
Voltage (V)
10
-10
0
6
12
18
24
30
V
GS
-
Gate-to-Source
Voltage (V)
Gate Current vs. Gate-Source Voltage
80
V
GS
= 10 V thru 4 V
40
50
Gate Current vs. Gate-Source Voltage
60
I
D
- Drain Current (A)
V
GS
= 3 V
I
D
- Drain Current (A)
30
40
20
T
C
= 25
°C
20
10
T
C
= 125
°C
T
C
= - 55
°C
2
3
4
5
0
0
2
4
6
8
V
DS
- Drain-to-Source Voltage (V)
10
0
0
1
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
0.05
3000
Transfer Characteristics
0.04
R
DS(on)
- On-Resistance (Ω)
V
GS
= 4.5 V
C - Capacitance (pF)
2400
0.03
1800
0.02
1200
C
oss
600
0.01
V
GS
= 10 V
0.00
0
14
28
42
56
70
I
D
- Drain Current (A)
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
On-Resistance vs. Drain Current
Capacitance
3