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DTL9604_13 参数 Datasheet PDF下载

DTL9604_13图片预览
型号: DTL9604_13
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道60 V( DS ) MOSFET低的Qg的高效率 [N-Channel 60 V (D-S) MOSFET Low Qg for High Efficiency]
分类和应用:
文件页数/大小: 8 页 / 1336 K
品牌: DINTEK [ DinTek Semiconductor Co,.Ltd ]
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TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
160
www.din-tek.jp
DTL9604
128
I
D
- Drain Current (A)
96
64
Package Limited
32
0
0
25
50
75
100
125
T
C
- Case Temperature (°C)
150
Current Derating*
125
3.0
100
2.4
Power (W)
Power (W)
75
1.8
50
1.2
25
0.6
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
0.0
0
25
50
75
100
125
150
T
A
- Ambient Temperature (°C)
Power, Junction-to-Case
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
5