欢迎访问ic37.com |
会员登录 免费注册
发布采购

DTL9604_13 参数 Datasheet PDF下载

DTL9604_13图片预览
型号: DTL9604_13
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道60 V( DS ) MOSFET低的Qg的高效率 [N-Channel 60 V (D-S) MOSFET Low Qg for High Efficiency]
分类和应用:
文件页数/大小: 8 页 / 1336 K
品牌: DINTEK [ DinTek Semiconductor Co,.Ltd ]
 浏览型号DTL9604_13的Datasheet PDF文件第1页浏览型号DTL9604_13的Datasheet PDF文件第2页浏览型号DTL9604_13的Datasheet PDF文件第4页浏览型号DTL9604_13的Datasheet PDF文件第5页浏览型号DTL9604_13的Datasheet PDF文件第6页浏览型号DTL9604_13的Datasheet PDF文件第7页浏览型号DTL9604_13的Datasheet PDF文件第8页  
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 4 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
www.din-tek.jp
DTL9604
100
80
60
60
T
C
= 25
°C
40
40
20
V
GS
= 3 V
V
GS
= 2 V
20
T
C
= 125
°C
T
C
= - 55
°C
0.0
1.0
2.0
3.0
4.0
5.0
V
GS
- Gate-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
0
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
0.0050
7000
Transfer Characteristics
0.0040
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
V
GS
= 4.5 V
0.0030
5600
C
iss
4200
C
oss
2800
0.0020
V
GS
= 10 V
0.0010
1400
C
rss
0.0000
0
20
60
40
I
D
- Drain Current (A)
80
100
0
0
12
24
36
48
60
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 20 A
8
V
DS
= 30 V
R
DS(on)
- On-Resistance (Normalized)
V
GS
- Gate-to-Source Voltage (V)
1.7
2.0
I
D
= 20 A
Capacitance
V
GS
= 10 V
6
V
DS
= 20 V
V
DS
= 40 V
1.4
V
GS
= 4.5 V
1.1
4
2
0.8
0
0
13
26
39
52
65
0.5
- 50
- 25
Q
g
- Total Gate Charge (nC)
0
25
50
75
100
T
J
- Junction Temperature (°C)
125
150
Gate Charge
On-Resistance vs. Junction Temperature
3