TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.015
www.din-tek.jp
DTL9604
10
I
S
- Source Current (A)
1
T
J
= 25 °C
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
0.012
I
D
= 20 A
0.009
0.1
0.006
T
J
= 125
°C
0.003
T
J
= 25
°C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.000
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
0.5
On-Resistance vs. Gate-to-Source Voltage
200
0.2
V
GS(th)
- Variance (V)
160
I
D
= 5 mA
- 0.4
Power (W)
150
- 0.1
120
80
- 0.7
I
D
= 250 μA
40
- 1.0
- 50
- 25
0
25
50
75
100
125
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
I
DM
Limited
I
D
Limited
10
I
D
- Drain Current (A)
Single Pulse Power, Junction-to-Ambient
1 ms
Limited by R
DS(on)
*
1
10 ms
100 ms
1s
10 s
T
A
= 25 °C
Single Pulse
0.01
0.01
0.1
1
BVDSS Limited
10
DC
100
0.1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
DINTEK [ DinTek Semiconductor Co,.Ltd ]
