DS1921H/Z
PHYSICAL SPECIFICATION
Size
See mechanical drawing
3.3g
Weight
Safety
Meets UL#913 (4th Edit.); Intrinsically Safe
Apparatus, approval under Entity Concept for use in
Class I, Division 1, Group A, B, C and D Locations
(application pending)
ABSOLUTE MAXIMUM RATINGS*
IO Voltage to GND
-0.5V, +6V
IO Sink Current
20mA
Temperature Range DS1921H, DS1921Z
Storage Temperature Range
-40°C to +85°C**
-40°C to +50°C**
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
** Storage or operation above 50°C significantly reduces battery life.
ELECTRICAL CHARACTERISTICS (VPUP = 2.8V to 5.25V, TA = -40°C to +85°C)
PARAMETER
IO pin general data
1-Wire Pull-Up
Resistance
SYMBOL
CONDITIONS
MIN
TYP MAX UNITS NOTES
RPUP
2.2
1, 2
kΩ
Input Capacitance
Input Load Current
High-to-Low
Switching Threshold
Input Low Voltage
Low-to-High
Switching Threshold
Output low voltage at
4mA
CIO
IL
VTL
100
800
10
pF
µA
V
3, 16
4
5, 6, 7,
16
1, 5, 8
5, 6, 9,
16
IO pin at VPUP
VPUP > 4.5V
1.14
0.71
2.70
2.70
0.30
2.70
2.70
0.4
VIL
VTH
V
V
VPUP > 4.5V
1.00
0.66
VOL
tREC
V
5, 10
Recovery Time
Standard Speed,
5
2
5
µs
1, 16
R
PUP = 2.2kΩ
Overdrive Speed,
RPUP = 2.2kΩ
Overdrive Speed,
directly prior to reset
pulse; RPUP = 2.2kΩ
Standard Speed
Timeslot Duration
tSLOT
65
8
µs
1, 15
Overdrive Speed
40 of 44
DALLAS [ DALLAS SEMICONDUCTOR ]
