DS18B20X
AC ELECTRICAL CHARACTERISTICS: NV MEMORY
(-55°C to +100°C; VDD=3.0V to 5.5V)
PARAMETER
NV Write Cycle Time
EEPROM Writes
SYMBOL
twr
CONDITION
MIN
TYP
MAX
UNITS
ms
2
10
NEEWR
tEEDR
-55°C to +55°C
-55°C to +55°C
50k
10
writes
years
EEPROM Data Retention
AC ELECTRICAL CHARACTERISTICS
(-55°C to +125°C; VDD=3.0V to 5.5V)
PARAMETER
Temperature Conversion
Time
SYMBOL CONDITION MIN TYP MAX UNITS NOTES
tCONV
9-bit resolution
10-bit resolution
11-bit resolution
12-bit resolution
Start Convert T
Command Issued
93.75
187.5
375
ms
ms
ms
ms
µs
1
1
1
1
750
Time to Strong Pullup On
tSPON
10
Time Slot
tSLOT
tREC
rLOW0
tLOW1
tRDV
tRSTH
tRSTL
tPDHIGH
tPDLOW
CIN/OUT
60
1
60
1
120
µs
µs
µs
µs
µs
µs
µs
µs
µs
pF
1
1
1
1
1
1
1,2
1
Recovery Time
Write 0 Low Time
Write 1 Low Time
Read Data Valid
Reset Time High
Reset Time Low
Presence Detect High
Presence Detect Low
Capacitance
120
15
15
480
480
15
60
240
25
60
1
NOTES:
1. Refer to timing diagrams in Figure 18.
2. Under parasite power, if tRSTL > 960 µs, a power on reset may occur.
TYPICAL PERFORMANCE CURVE Figure 17
DS18B20X Typical Thermometer Error
(VDD = 3.0V - 5.5V)
3
2.5
2
1.5
+3s Error
1
0.5
Mean Error
0
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100 110 120
-0.5
-1
-1.5
-2
-3s Error
-2.5
-3
Reference Temperature (°C)
19 of 21
DALLAS [ DALLAS SEMICONDUCTOR ]
