Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date :
CYStech Electronics Corp.
Page No. : 5/6
Characteristic Curves(Cont.)
Gate Charge Characteristics
Capaci t ance Char act er i st i cs
10
1500
ID =8A
f = 1MHz
GS = 0 V
V
DS
= 5V
1350
1200
V
10V
8
6
4
Ci ss
15V
1050
900
750
600
450
300
2
0
Coss
Cr ss
150
0
0
5
10
15
20
25
30
0
4
8
12
16
V - Drain-Source Voltage( V )
DS
Q - Gate Charge( nC)
g
Single Pulse Maximum Power Dissipation
Si n gl e Pu l se
Maximum Safe Operating Area
50
100
10
R
DS(ON) Limit
R
θJA = 125°C/W
= 25°C
T
A
100μs
40
30
1ms
10ms
100ms
1
0.1
1s
10s
DC
20
V = 10V
Si n gl e Pu l se
GS
10
0
R
θJA= 125°C/W
TA = 25°C
0.01
0.1
0.001
0.01
0.1
1
10
100
1000
1
10
100
V
DS
- Drain-Source Voltage( V )
Transient Thermal Response Curve
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
0.02
0.01
PDM
t1
t2
t1
t2
0.01
1.Duty Cycle,D=
2.RθJA =125°C/W
3.T - T = P* RθJA (t)
Si n gl e Pu l se
J
A
4.RθJA(t)=r(t) + R
θJA
0.001
10
-4
-3
-2
-1
10
10
10
1
10
100
1000
t1 ,Time (sec)
MTB20N03Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
