Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date :
CYStech Electronics Corp.
Page No. : 2/6
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current
VDS
VGS
ID
30
±20
8
6
32 *1
8
3.2
1.6 *2
ID
A
IDM
IAS
EAS
EAR
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=8A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
mJ
3
1.5
TA=25 °C
TA=100 °C
Total Power Dissipation
PD
W
Operating Junction and Storage Temperature
Tj, Tstg
-55~+175
°C
.
Note : *1 Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Symbol
Rth,j-c
Rth,j-a
Value
25
50
Unit
°C/W
°C/W
Thermal Resistance, Junction-to-ambient (Note)
Note : 50°C / W when mounted on a 1 in2 pad of 2 oz copper.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
GFS
30
1.0
-
-
-
-
8
-
-
1.5
16
-
-
-
-
3.0
-
V
V
S
VGS=0, ID=250μA
VDS = VGS, ID=250μA
VDS =5V, ID=8A
nA
±
100
1
±
IGSS
VGS= 20
μA
μA
A
VDS =24V, VGS =0
IDSS
25
-
20
31
VDS =20V, VGS =0, Tj=125°C
VDS =10V, VGS=10V
VGS =10V, ID=8A
*ID(ON)
*RDS(ON)
-
Ω
15.5
23
m
m
Ω
-
VGS =5V, ID=6A
Dynamic
Qg (VGS=10V)
Qg (VGS=5V)
-
-
-
-
-
-
-
-
11
6
-
*1, 2
*1, 2
nC
ID=8A, VDS=15V, VGS=10V
Qgs
1.2
3.3
1115
116
82
-
-
-
-
-
-
*1, 2
Qgd
*1, 2
Ciss
Coss
Crss
Rg
pF
VGS=0V, VDS=15V, f=1MHz
VGS=15mV, VDS=0V, f=1MHz
Ω
2
MTB20N03Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
