Spec. No. : C396Q8
Issued Date : 2009.04.29
Revised Date :
CYStech Electronics Corp.
Page No. : 4/6
Characteristic Curves
On-Resistance Variation with Drain Current and Gate Voltage
On-Region Characteristics
5V
30
25
20
15
10
5
2.4
2.2
2.0
1.8
V
GS = 10V
6V
7V
VGS = 3.5 V
4.0 V
4.5V
4V
1.6
1.4
1.2
4.5 V
5.0 V
6.0 V
7.0 V
10 V
3.5V
1.0
0.8
0
0
6
12
18
24
30
0
1
2
3
4
5
I
D
- Drain Current(A)
V - Drain Source Voltage(V)
DS
On-Resistance Variation with Gate-to-Source Voltage
ID =8 A
On-Resistance Variation with Temperature
ID =8A
0.09
1.9
0.08
0.07
V = 10V
GS
1.6
1.3
1.0
0.7
0.4
0.06
0.05
0.04
0.03
TA = 125°C
TA = 25°C
0.02
0.01
-50
-25
0
25
50
75 100
125
150
2
4
6
8
10
V - Gate-Source Voltage( V )
TJ - Junction Temperature (°C)
GS
Body Diode Forward Voltage Variation
with Source Current and Temperature
Transfer Characteristics
30
100
V = 10V
DS
V
GS
= 0V
25
20
15
T = 125° C
A
10
25°C
T = -55°C
A
25°C
1
0.1
125°C
-55°C
10
0.01
5
0
0.001
1
1.5
2.0
2.5
3.0
3.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VGS - Gate-Source Voltage( V )
V - Body Diode Forward Voltage( V)
SD
MTB20N03Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
