Spec. No. : C452Q8
Issued Date : 2009.05.13
Revised Date :
CYStech Electronics Corp.
Page No. : 5/6
Characteristic Curves(Cont.)
Gate Charge Characteristics
Capacitance Characteristics
10
7500
ID = - 12A
f =1MHz
VGS = 0 V
Ciss
V
DS
= - 5V
- 10V
8
6
4
6000
4500
- 15V
3000
1500
0
Coss
Cr ss
2
0
0
15
Q g - Gat e Char ge(nC)
30
45
60
0
5
10
15
20
25
30
75
- VDS, Drain-t o-Source Volt age(V)
Maximum Safe OperatingArea
Single Pulse Maximum Power Dissipation
Single Pulse
100
50
40
30
20
100μs
RDS(ON) Limit
RθJA = 125°C/W
1ms
10ms
T = 25°C
A
10
1
100ms
1s
10s
DC
0.1
VGS = - 10 V
Si n gl e Pu l se
θJA = 125°C/ W
TA = 25°C
10
0
R
0.01
0.1
0.001
0.01
0.1
1
10
1000
100
1
10
100
t 1,Time (sec)
-V , Drain - Source Voltage(V)
SD
Transient Thermal Response Curve
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes:
0.02
0.01
PDM
t1
t2
t1
0.01
1.Duty Cycle,D =
t2
2.RθJA=125°C/W
3.T - T = P* RθJA (t)
A
J
Single Pulse
4.R (t)=r(t) +R
θJA
θJA
0.001
-2
10
-1
10
10-3
1
10
100
10 -4
1000
t ,Time (sec)
MTB14P03Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
