Spec. No. : C452Q8
Issued Date : 2009.05.13
Revised Date :
CYStech Electronics Corp.
Page No. : 4/6
Characteristic Curves
On-Region Characteristics
50
On-Resistance Variation with Drain Current and Gate Voltage
VGS = - 3.5 V
2.4
V = - 10V
GS
- 4.5V
- 6.0V
2.2
2.0
1.8
1.6
1.4
40
- 4.0V
- 4.0 V
- 4.5 V
30
- 3.5V
- 3.0V
20
10
- 5 V
- 6 V
1.2
1
- 7 V
- 10 V
0.8
0
1
2
3
0
0
10
20
30
40
50
D
-V - Drain-to-Source Voltage(V)
DS
- I - Drain Current(A)
On-Resistance Variation with Temperature
I D= - 12 A
On-Resistance Variation with Gate-to-Source Voltage
ID =- 6 A
1.6
0.06
V
= - 10V
GS
0.05
0.04
1.4
1.2
1.0
0.03
T = 125°C
A
0.02
0.01
0
0.8
0.6
TA = 25°C
-50
-25
0
25
50
75 100 125
TJ - Junction Temperature (°C)
150 175
2
4
6
8
10
- VGS- Gate-to-Source Voltage(V)
Transfer Characteristics
Body Diode Forward Voltage Variation with Source Current and Temperature
100
40
VDS = - 5V
VGS = 0V
10
1
25°C
- 55°C
30
20
T = 125°C
A
TA = 125°C
25°C
0.1
-55°C
0.01
10
0.001
0
0.0001
1.5
2
2.5
3
3.5
4
0
0.2
0.4
0.6
0.8
1.0
1.2
-VGS - Gate-to-Source Voltage(V)
-V - Body Diode Forward Voltage(V)
SD
MTB14P03Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
