Spec. No. : C452Q8
Issued Date : 2009.05.13
Revised Date :
CYStech Electronics Corp.
Page No. : 2/6
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Symbol
BVDSS
VGS
ID
Limits
Unit
V
-30
±25
-12
V
A
Continuous Drain Current @TC=25 °C
Continuous Drain Current @TC=100 °C
Pulsed Drain Current (Note 1)
ID
-9
A
IDM
-48
A
Avalanche Current
IAS
-20
A
Avalanche Energy @ L=0.1mH, ID=-20A, RG=25Ω
EAS
20
mJ
W
W
°C
3
TA=25 °C
Power Dissipation
PD
1.5
TA=100 °C
Operating Junction and Storage Temperature Range
Tj ; Tstg
-55~+175
Note : 1.Pulse width limited by maximum junction temperature.
Electrical Characteristics (Tc=25°C, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
IDSS
-30
-1
-
-
-
-12
-
-
-
-1.5
-
-
-
-
12
17
-
-3
±100
-1
-10
-
14
21
V
V
nA
μA
μA
A
VGS=0, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±25V, VDS=0
VDS=-24V, VGS=0
VDS=-20V, VGS=0, Tj=125°C
VDS=-5V, VGS=-10V
ID=-12A, VGS=-10V
ID=-9A, VGS=-5V
ID(ON)
(Note 1)
(Note 1)
RDS(ON)
GFS
mΩ
-
28
-
S
VDS=-5V, ID=-12A
(Note 1)
Dynamic
Ciss
Coss
Crss
td(ON)
tr
-
-
-
-
-
-
-
-
-
-
-
6375
1612
1481
26
22
75
15
56
40
15
-
-
-
-
-
-
-
-
-
-
-
pF
ns
VDS=-15V, VGS=0, f=1MHz
VDS=-15V, ID=-1A,
(Note 1&2)
(Note 1&2)
(Note 1&2)
(Note 1&2)
Ω
VGS=-10V, RG=2.7
td(OFF)
tf
Qg(VGS=10V) (Note 1&2)
Qg(VGS=5V)
VDS=-15V, ID=-10A,
VGS=-10V,
(Note 1&2)
nC
Qgs
Qgd
(Note 1&2)
18
(Note 1&2)
MTB14P03Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
