CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C817I3-H
Issued Date : 2003.04.02
Revised Date: 2009.02.04
Page:1/5
BTB772I3
Features
•
Low V
CE
(sat),typically -0.3 V at I
C
/ I
B
= -2A / -0.2A
•
Excellent current gain characteristics
•
Complementary to BTD882I3
•
RoHS compliant package
BV
CEO
I
C
R
CESAT
-30V
-3A
150mΩ
Symbol
BTB772I3
Outline
TO-251
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw
≦
350μs,Duty
≦
2%
.
Symbol
V
CBO
V
CEO
V
EBO
I
C
(DC)
I
C
(pulse)
Pd(Ta=25
℃
)
Pd(Tc=25
℃
)
Tj
Tstg
Limit
-40
-30
-5
-3
-7
1
10
150
-55~+150
*1
Unit
V
V
V
A
A
W
°C
°C
BTB772I3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
