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BTA1952I3 参数 Datasheet PDF下载

BTA1952I3图片预览
型号: BTA1952I3
PDF下载: 下载PDF文件 查看货源
内容描述: 低VCESAT PNP外延平面晶体管 [Low Vcesat PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 215 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*V
BE(sat)
*h
FE
1
*h
FE
2
f
T
Min.
-100
-60
-5
-
-
-
-
70
30
-
Typ.
-
-
-
-
-
-0.45
-
-
-
60
Max.
-
-
-
-1
-1
-0.6
-1.2
240
-
-
Unit
V
V
V
μA
μA
V
V
-
-
MHz
Spec. No. : C601I3
Issued Date : 2005.10.14
Revised Date : 2009.02.04
Page No. : 2/ 5
Test Conditions
I
C
=-50μA, I
E
=0
I
C
=-10mA, I
B
=0
I
E
=-50μA, I
C
=0
V
CB
=-100V, I
E
=0
V
EB
=-5V, I
C
=0
I
C
=-3A, I
B
=-0.15A
I
C
=-3A, I
B
=-0.15A
V
CE
=-1V, I
C
=-1A
V
CE
=-1V, I
C
=-3A
V
CE
=-4V, I
C
=-1A, f=30MHz
*Pulse Test : Pulse Width
≤380μs,
Duty Cycle≤2%
Ordering Information
Device
BTA1952I3
Package
TO-251
(RoHS compliant)
Shipping
80 pcs / tube, 50 tubes / box
Marking
A1952
BTA1952I3
CYStek Product Specification