CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
Spec. No. : C601I3
Issued Date : 2005.10.14
Revised Date : 2009.02.04
Page No. : 1/ 5
BTA1952I3
Features
BV
CEO
I
C
R
CESAT
-100V
-5A
150mΩ
•
Low V
CE
(sat), V
CE
(sat)=-0.45 V (typical), at I
C
/ I
B
= -3A / -0.15A
•
Excellent DC current gain characteristics
•
Wide SOA
•
Complementary to BTC5103I3
•
RoHS compliant package
Symbol
BTA1952I3
Outline
TO-251
B:Base
C:Collector
E:Emitter
B CCE
B
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1
.
Single Pulse Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(Pulse)
Pd(T
A
=25℃)
Pd(T
C
=25℃)
Tj
Tstg
Limits
-100
-60
-5
-5
-10
1
25
150
-55~+150
Unit
V
V
V
*1
A
W
°C
°C
BTA1952I3
CYStek Product Specification