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W256H 参数 Datasheet PDF下载

W256H图片预览
型号: W256H
PDF下载: 下载PDF文件 查看货源
内容描述: 12输出缓冲器2和DDR 3 SRAM DIMMS [12 Output Buffer for 2 DDR and 3 SRAM DIMMS]
分类和应用: 静态存储器双倍数据速率
文件页数/大小: 9 页 / 177 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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W256
Maximum Ratings
Supply Voltage to Ground Potential ..................–0.5 to +7.0V
DC Input Voltage (except BUF_IN) ............ –0.5V to V
DD
+0.5
Storage Temperature .................................. –65°C to +150°C
Static Discharge Voltage ............................................>2000V
(per MIL-STD-883, Method 3015)
Operating Conditions
Parameter
V
DD3.3
V
DD2.5
T
A
C
OUT
C
IN
Supply Voltage
Supply Voltage
Operating Temperature (Ambient Temperature)
Output Capacitance
Input Capacitance
Description
Min.
3.135
2.375
0
6
5
Typ.
Max.
3.465
2.625
70
Unit
V
V
°C
pF
pF
Electrical Characteristics
Over the Operating Range
Parameter
V
IL
V
IH
I
IL
I
IH
I
OH
I
OL
V
OL
V
OH
I
DD
I
DD
I
DDS
V
OUT
V
OC
IN
DC
Description
Input LOW Voltage
Input HIGH Voltage
Input LOW Current
Input HIGH Current
Output HIGH Current
Output LOW Current
Output LOW Voltage
Output HIGH Voltage
Supply Current
(DDR-Only mode)
Supply Current
(DDR-Only mode)
Supply Current
Output Voltage Swing
Output Crossing Voltage
Input Clock Duty Cycle
V
IN
= 0V
V
IN
= V
DD
V
DD
= 2.375V
V
OUT
= 1V
V
DD
= 2.375V
V
OUT
= 1.2V
I
OL
= 12 mA, V
DD
= 2.375V
I
OH
= –12 mA, V
DD
= 2.375V
Unloaded outputs, 133 MHz
Loaded outputs, 133 MHz
PWR_DWN# = 0
See Test Circuity (Refer to
0.7
(V
DD
/2)
–0.1
48
V
DD
/2
1.7
400
500
100
V
DD
+ 0.6
(V
DD
/2)
+0.1
52
–18
26
–32
35
0.6
Test Conditions
For all pins except SMBus
2.0
50
50
Min.
Typ.
Max.
0.8
Unit
V
V
µA
µA
mA
mA
V
V
mA
mA
µA
V
V
%
Notes:
2. Multiple Supplies: The voltage on any input or I/O pin cannot exceed the power pin during power-up. Power supply sequencing is NOT required.
3. Parameter is guaranteed by design and characterization. Not 100% tested in production.
Document #: 38-07256 Rev. *C
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