欢迎访问ic37.com |
会员登录 免费注册
发布采购

PALC22V10-25WC 参数 Datasheet PDF下载

PALC22V10-25WC图片预览
型号: PALC22V10-25WC
PDF下载: 下载PDF文件 查看货源
内容描述: 闪存擦除可再编程的CMOS PAL器件 [Flash-erasable Reprogrammable CMOS PAL Device]
分类和应用: 闪存
文件页数/大小: 13 页 / 350 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
 浏览型号PALC22V10-25WC的Datasheet PDF文件第1页浏览型号PALC22V10-25WC的Datasheet PDF文件第2页浏览型号PALC22V10-25WC的Datasheet PDF文件第3页浏览型号PALC22V10-25WC的Datasheet PDF文件第5页浏览型号PALC22V10-25WC的Datasheet PDF文件第6页浏览型号PALC22V10-25WC的Datasheet PDF文件第7页浏览型号PALC22V10-25WC的Datasheet PDF文件第8页浏览型号PALC22V10-25WC的Datasheet PDF文件第9页  
USE ULTRA37000
TM
FOR
ALL NEW DESIGNS
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65
°
C to +150
°
C
Ambient Temperature with
Power Applied.............................................–55
°
C to +125
°
C
Supply Voltage to Ground Potential
(Pin 24 to Pin 12) ........................................... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High-Z State ............................................... –0.5V to +7.0V
DC Input Voltage............................................ –0.5V to +7.0V
PALCE22V10
Output Current into Outputs (LOW)............................. 16 mA
DC Programming Voltage............................................. 12.5V
Latch-up Current..................................................... > 200 mA
Static Discharge Voltage
(per MIL-STD-883, Method 3015) ............................ > 2001V
Operating Range
Range
Commercial
Industrial
Military
[1]
Ambient
Temperature
0
°
C to +75
°
C
–40
°
C to +85
°
C
–55
°
C to +125
°
C
V
CC
5V
±5%
5V
±10%
5V
±10%
Electrical Characteristics
Over the Operating Range
[2]
Parameter
V
OH
V
OL
V
IH
V
IL[4]
I
IX
I
OZ
I
SC
I
CC1
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Level
Input LOW Level
Input Leakage Current
Output Leakage Current
Standby Power Supply
Current
V
CC
= Min.,
V
IN
= V
IH
or V
IL
V
CC
= Min.,
V
IN
= V
IH
or V
IL
Test Conditions
I
OH
= –3.2 mA
I
OH
= –2 mA
I
OL
= 16 mA
I
OL
= 12 mA
Com’l
Mil/Ind
Com’l
Mil/Ind
2.0
–0.5
–10
–40
–30
10, 15, 25 ns
5, 7.5 ns
15, 25 ns
10 ns
I
CC2
[6]
Min.
2.4
Max. Unit
V
0.5
V
V
0.8
10
40
90
130
120
120
110
140
130
130
V
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
Guaranteed Input Logical HIGH Voltage for All Inputs
[3]
Guaranteed Input Logical LOW Voltage for All Inputs
[3]
V
SS
< V
IN
< V
CC
, V
CC
= Max.
V
CC
= Max., V
SS
< V
OUT
< V
CC
0.5V
[5,6]
Com’l
Mil/Ind
Com’l
Com’l
Mil/Ind
Mil/Ind
V
CC
= Max.,
V
IN
= GND,
Outputs Open in Unprogrammed
Device
Output Short Circuit Current V
CC
= Max., V
OUT
=
–130 mA
Operating Power Supply
Current
V
CC
= Max., V
IL
= 0V, V
IH
= 3V,
10, 15, 25 ns
Output Open, Device Programmed 5, 7.5 ns
as a 10-bit Counter,
15, 25 ns
f = 25 MHz
10 ns
Capacitance
[6]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
V
IN
= 2.0V @ f = 1 MHz
V
OUT
= 2.0V @ f = 1 MHz
Min.
Max.
10
10
Unit
pF
pF
Endurance Characteristics
[6]
Parameter
N
Description
Minimum Reprogramming Cycles
Test Conditions
Normal Programming Conditions
Min.
100
Max.
Unit
Cycles
Notes:
1. T
A
is the “instant on” case temperature.
2. See the last page of this specification for Group A subgroup testing information.
3. These are absolute values with respect to device ground. All overshoots due to system or tester noise are included.
4. V
IL
(Min.) is equal to –3.0V for pulse durations less than 20 ns.
5. Not more than one output should be tested at a time. Duration of the short circuit should not be more than one second. V
OUT
= 0.5V has been chosen to avoid test problems
caused by tester ground degradation.
6. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-03027 Rev. *B
Page 4 of 13