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CY7C1361B-133BGC 参数 Datasheet PDF下载

CY7C1361B-133BGC图片预览
型号: CY7C1361B-133BGC
PDF下载: 下载PDF文件 查看货源
内容描述: 9兆位( 256K ×36 / 512K ×18 )流通型SRAM [9-Mbit (256K x 36/512K x 18) Flow-Through SRAM]
分类和应用: 静态存储器
文件页数/大小: 34 页 / 820 K
品牌: CYPRESS [ CYPRESS ]
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CY7C1361B  
CY7C1363B  
Switching Characteristics Over the Operating Range[19, 20]  
133 MHz  
117 MHz  
100 MHz  
Parameter  
tPOWER  
Clock  
tCYC  
tCH  
tCL  
Description  
Min.  
1
Max.  
Min.  
1
Max.  
Min.  
1
Max.  
Unit  
ms  
VDD(Typical) to the first Access[15]  
Clock Cycle Time  
Clock HIGH  
7.5  
3.0  
3.0  
8.5  
3.2  
3.2  
10  
4.0  
4.0  
ns  
ns  
ns  
Clock LOW  
Output Times  
tCDV  
tDOH  
tCLZ  
tCHZ  
tOEV  
tOELZ  
tOEHZ  
Set-up Times  
tAS  
Data Output Valid After CLK Rise  
Data Output Hold After CLK Rise  
Clock to Low-Z[16, 17, 18]  
6.5  
7.5  
8.5  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
2.0  
0
0
2.0  
0
0
2.0  
0
0
Clock to High-Z[16, 17, 18]  
3.5  
3.5  
3.5  
3.5  
3.5  
3.5  
OE LOW to Output Valid  
OE LOW to Output Low-Z[16, 17, 18]  
OE HIGH to Output High-Z[16, 17, 18]  
0
0
0
3.5  
3.5  
3.5  
Address Set-up Before CLK Rise  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
ns  
ns  
ns  
ns  
tADS  
tADVS  
tWES  
ADSP, ADSC Set-up Before CLK Rise  
ADV Set-up Before CLK Rise  
Set-up Before CLK  
GW, BWE, BW[A:D]  
Rise  
tDS  
tCES  
Data Input Set-up Before CLK Rise  
Chip Enable Set-up  
1.5  
1.5  
1.5  
1.5  
1.5  
1.5  
ns  
ns  
Hold Times  
tAH  
tADH  
tWEH  
tADVH  
tDH  
Address Hold After CLK Rise  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
ns  
ns  
ns  
ns  
ns  
ns  
ADSP, ADSC Hold After CLK Rise  
,
,
GW BWE BW[A:D] Hold After CLK Rise  
ADV Hold After CLK Rise  
Data Input Hold After CLK Rise  
Chip Enable Hold After CLK Rise  
tCEH  
Notes:  
15. This part has a voltage regulator internally; t  
can be initiated.  
is the time that the power needs to be supplied above V (minimum) initially, before a read or write operation  
DD  
POWER  
16. t  
, t  
,t  
, and t  
are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.  
CHZ CLZ OELZ  
OEHZ  
17. At any given voltage and temperature, t  
is less than t  
and t  
is less than t  
to eliminate bus contention between SRAMs when sharing the same  
CLZ  
OEHZ  
OELZ  
CHZ  
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed  
to achieve High-Z prior to Low-Z under the same system conditions  
18. This parameter is sampled and not 100% tested.  
19. Timing reference level is 1.5V when V  
= 3.3V and is 1.25V when V  
= 2.5V.  
DDQ  
DDQ  
20. Test conditions shown in (a) of AC Test Loads unless otherwise noted.  
Document #: 38-05302 Rev. *B  
Page 25 of 34  
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