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CY7C1360B-166AC 参数 Datasheet PDF下载

CY7C1360B-166AC图片预览
型号: CY7C1360B-166AC
PDF下载: 下载PDF文件 查看货源
内容描述: 9兆位( 256K ×36 / 512K ×18 )流水线式SRAM [9-Mbit (256K x 36/512K x 18) Pipelined SRAM]
分类和应用: 静态存储器
文件页数/大小: 34 页 / 859 K
品牌: CYPRESS [ CYPRESS ]
 浏览型号CY7C1360B-166AC的Datasheet PDF文件第10页浏览型号CY7C1360B-166AC的Datasheet PDF文件第11页浏览型号CY7C1360B-166AC的Datasheet PDF文件第12页浏览型号CY7C1360B-166AC的Datasheet PDF文件第13页浏览型号CY7C1360B-166AC的Datasheet PDF文件第15页浏览型号CY7C1360B-166AC的Datasheet PDF文件第16页浏览型号CY7C1360B-166AC的Datasheet PDF文件第17页浏览型号CY7C1360B-166AC的Datasheet PDF文件第18页  
CY7C1360B  
CY7C1362B  
Truth Table[3, 4, 5, 6, 7, 8]  
Operation  
Add. Used  
None  
CE2  
X
L
X
L
CE3  
X
X
H
X
H
X
L
L
L
L
L
X
X
X
X
X
X
X
X
X
X
X
X
WRITE  
CLK  
DQ  
CE1  
H
L
L
L
L
X
L
L
L
L
L
X
X
H
H
X
H
X
X
H
H
X
H
ZZ ADSP ADSC ADV  
OE  
X
X
X
X
X
X
L
H
X
L
H
L
H
L
H
X
X
L
H
L
H
X
X
Deselect Cycle, Power Down  
Deselect Cycle, Power Down  
Deselect Cycle, Power Down  
Deselect Cycle, Power Down  
Deselect Cycle, Power Down  
Snooze Mode, Power Down  
READ Cycle, Begin Burst  
READ Cycle, Begin Burst  
WRITE Cycle, Begin Burst  
READ Cycle, Begin Burst  
READ Cycle, Begin Burst  
READ Cycle, Continue Burst  
READ Cycle, Continue Burst  
READ Cycle, Continue Burst  
READ Cycle, Continue Burst  
WRITE Cycle, Continue Burst  
WRITE Cycle, Continue Burst  
READ Cycle, Suspend Burst  
READ Cycle, Suspend Burst  
READ Cycle, Suspend Burst  
READ Cycle, Suspend Burst  
WRITE Cycle, Suspend Burst  
L
L
L
L
L
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
X
L
L
H
H
X
L
L
X
X
L
X
X
X
X
X
X
X
X
X
X
X
L
X
X
X
X
X
X
X
X
L
H
H
H
H
H
H
L
L
H
H
H
H
L
L-H Three-State  
L-H Three-State  
L-H Three-State  
L-H Three-State  
L-H Three-State  
None  
None  
None  
None  
X
X
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
L
None  
X
X
X
L
L
L
H
H
H
H
H
H
H
H
H
H
H
H
X
L-H  
Three-State  
Q
External  
External  
External  
External  
External  
Next  
Next  
Next  
Next  
Next  
L
L-H Three-State  
L-H  
L-H  
H
H
H
H
H
X
X
H
X
H
H
X
X
H
X
D
Q
L-H Three-State  
L-H  
L-H Three-State  
L-H  
L-H Three-State  
L-H  
L-H  
L-H  
L-H Three-State  
L-H  
L-H Three-State  
L-H  
L-H  
Q
L
L
L
L
Q
D
D
Q
Next  
L
Current  
Current  
Current  
Current  
Current  
Current  
H
H
H
H
H
H
Q
D
D
WRITE Cycle, Suspend Burst  
L
Notes:  
3. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.  
4. WRITE = L when any one or more Byte Write Enable signals and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals, BWE, GW = H.  
5. The DQ pins are controlled by the current cycle and the signal. is asynchronous and is not sampled with the clock.  
OE  
OE  
7. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BW . Writes may occur only on subsequent clocks  
6. CE , CE , and CE are available only in the TQFP package. BGA package has only 2 chip selects CE and CE .  
1
2
3
1
2
X
after the  
or with the assertion of  
. As a result,  
must be driven HIGH prior to the start of the Write cycle to allow the outputs to three-state.  
is  
OE  
ADSC  
OE  
ADSP  
a don't care for the remainder of the Write cycle  
8.  
is asynchronous and is not sampled with the clock rise. It is masked internally during Write cycles. During a Read cycle all data bits are Three-State when  
OE  
OE  
is  
.
is active (LOW)  
inactive or when the device is deselected, and all data bits behave as output when  
OE  
9. Table only lists a partial listing of the byte write combinations. Any combination of BW  
is valid. Appropriate write will be done based on which byte write is active.  
[A:D]  
Document #: 38-05291 Rev. *C  
Page 14 of 34