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CY7C1049DV33-10ZSXI 参数 Datasheet PDF下载

CY7C1049DV33-10ZSXI图片预览
型号: CY7C1049DV33-10ZSXI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8)静态RAM [4-Mbit (512K x 8) Static RAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 8 页 / 432 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1049DV33
Document History Page
Document Title: CY7C1049DV33 4-Mbit (512K x 8) Static RAM
Document Number: 38-05475
REV.
**
*A
*B
ECN NO.
201560
233729
351096
Issue Date
See ECN
See ECN
See ECN
Orig. of
Change
SWI
SYT
PCI
Description of Change
Advance Data sheet for C9 IPP
1.AC, DC parameters are modified as per EROS(Spec # 01-2165)
2.Pb-free offering in the ‘ordering information’
Changed from Advance to Preliminary
Removed 20 ns Speed bin
Corrected DC voltage (min) value in maximum ratings section from - 0.5 to
- 0.3V
Redefined I
CC
values for Com’l and Ind’l temperature ranges
I
CC
(Com’l): Changed from 100, 80 and 67 mA to 90, 80 and 75 mA for 8, 10
and 12ns speed bins respectively
I
CC
(Ind’l): Changed from 80 and 67 mA to 90 and 85 mA for 10 and 12ns
speed bins respectively
Added V
IH(max
) spec in Note# 2
Changed reference voltage level for measurement of Hi-Z parameters from
±500
mV to
±200
mV
Added Data Retention Characteristics/Waveform and footnotes 11 and 12
Changed Package Diagram name from 44-pin TSOP II Z44 to 44-pin TSOP
II ZS44
Changed part names from Z to ZS in the Ordering Information Table
Added 8 ns parts in the Ordering Information Table
Added Lead-Free Ordering Information
Shaded Ordering Information Table
Converted from Preliminary to Final
Removed -8 speed bin
Removed Commercial Operating Range product information
Added Automotive Operating Range product information
Updated Thermal Resistance table
Updated footnote #8 on High-Z parameter measurement
Replaced Package Name column with Package Diagram in the Ordering
Information table
*C
446328
See ECN
NXR
Document #: 38-05475 Rev. *C
Page 8 of 8