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CY7C1049DV33-10ZSXI 参数 Datasheet PDF下载

CY7C1049DV33-10ZSXI图片预览
型号: CY7C1049DV33-10ZSXI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K ×8)静态RAM [4-Mbit (512K x 8) Static RAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 8 页 / 432 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1049DV33
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
CC
to Relative GND
[3]
.... –0.3V to +4.6V
DC Voltage Applied to Outputs
in High-Z State
[3]
....................................–0.3V to V
CC
+ 0.3V
DC Input
Voltage
[3]
.................................–0.3V
to V
CC
+ 0.3V
-10 (Industrial)
Parameter
V
OH
V
OL
V
IH[3]
V
IL[3]
I
IX
I
OZ
I
CC
Description
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
[3]
Input Leakage Current
Output Leakage
Current
V
CC
Operating
Supply Current
GND < V
I
< V
CC
GND < V
OUT
< V
CC
,
Output Disabled
V
CC
= Max., f = f
MAX
= 1/t
RC
100MHz
83MHz
66MHz
40MHz
I
SB1
Automatic CE
Power-down Current
—TTL Inputs
Automatic CE
Power-down Current
—CMOS Inputs
Max. V
CC
, CE > V
IH
;
V
IN
> V
IH
or
V
IN
< V
IL
, f = f
MAX
Max. V
CC
, CE > V
CC
– 0.3V,
V
IN
> V
CC
– 0.3V,
or V
IN
< 0.3V, f = 0
Test Conditions
V
CC
= Min.,
I
OH
= –4.0 mA
V
CC
= Min., I
OL
= 8.0 mA
2.0
–0.3
–1
–1
Min.
2.4
0.4
V
CC
+ 0.3
0.8
+1
+1
90
80
70
60
20
2.0
–0.3
–1
–1
Max.
-12 (Automotive)
Min.
2.4
0.4
V
CC
+ 0.3
0.8
+1
+1
-
95
85
75
25
Max.
Unit
V
V
V
V
µA
µA
mA
mA
mA
mA
mA
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage............. ...............................>2001V
(per MIL-STD-883, Method 3015)
Latch-up Current...................................................... >200 mA
Operating Range
Range
Industrial
Automotive
Ambient
Temperature
–40°C to +85°C
–40°C to +125°C
V
CC
3.3V
±
0.3V
3.3V
±
0.3V
Speed
10 ns
12 ns
Electrical Characteristics
Over the Operating Range
I
SB2
10
15
mA
Capacitance
[4]
Parameter
C
IN
C
OUT
Description
Input Capacitance
I/O Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz,
V
CC
= 3.3V
Max.
8
8
Unit
pF
pF
Thermal Resistance
[4]
Parameter
Θ
JA
Θ
JC
Description
Thermal Resistance
(Junction to Ambient)
[4]
Thermal Resistance
(Junction to Case)
[4]
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
SOJ
Package
57.91
36.73
TSOP II
Package
50.66
17.17
Unit
°C/W
°C/W
Notes:
3. V
IL
(min.) = –2.0V and V
IH
(max) = V
CC
+ 2V for pulse durations of less than 20 ns.
4. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05475 Rev. *C
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