CY7C1049DV33
Data Retention Characteristics
Over the Operating Range
Parameter
V
DR
I
CCDR
t
CDR[4]
t
R[12]
Description
V
CC
for Data Retention
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
V
CC
= V
DR
= 2.0V, CE > V
CC
– 0.3V
V
IN
> V
CC
– 0.3V or V
IN
< 0.3V
Ind’l
Auto
0
t
RC
Conditions
[13]
Min.
2.0
10
15
Max
Unit
V
mA
mA
ns
ns
Data Retention Waveform
DATA RETENTION MODE
V
CC
3.0V
t
CDR
CE
V
DR
> 2V
3.0V
t
R
Switching Waveforms
Read Cycle No. 1
[14, 15]
t
RC
ADDRESS
t
AA
t
OHA
DATA OUT
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled)
[15, 16]
ADDRESS
t
RC
CE
t
ACE
OE
t
DOE
DATA OUT
V
CC
SUPPLY
CURRENT
t
LZOE
HIGH IMPEDANCE
t
LZCE
t
PU
50%
t
HZOE
t
HZCE
DATA VALID
t
PD
50%
I
SB
I
CC
HIGH
IMPEDANCE
Notes:
12. Full device operation requires linear V
CC
ramp from V
DR
to V
CC(min.)
> 50
µs
or stable at V
CC(min.)
> 50
µs
13. No input may exceed V
CC
+ 0.3V.
14. Device is continuously selected. OE, CE = V
IL
.
15. WE is HIGH for Read cycle.
16. Address valid prior to or coincident with CE transition LOW.
Document #: 38-05475 Rev. *C
Page 4 of 8
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