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CY7C1019DV33-10ZSXI 参数 Datasheet PDF下载

CY7C1019DV33-10ZSXI图片预览
型号: CY7C1019DV33-10ZSXI
PDF下载: 下载PDF文件 查看货源
内容描述: 1兆位( 128K ×8)静态RAM [1-Mbit (128K x 8) Static RAM]
分类和应用:
文件页数/大小: 11 页 / 387 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY7C1019DV33
Capacitance
[4]
Parameter
C
IN
C
OUT
Description
Input Capacitance
Output Capacitance
Test Conditions
T
A
= 25°C, f = 1 MHz, V
CC
= 3.3V
Max.
8
8
Unit
pF
pF
Thermal Resistance
[4]
Parameter
Θ
JA
Θ
JC
Description
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
SOJ
56.29
38.14
TSOP II VFBGA
62.22
21.43
36
9
Unit
°C/W
°C/W
AC Test Loads and Waveforms
[5]
ALL INPUT PULSES
90%
50
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
1.5V
Rise Time: 1 V/ns
Z = 50Ω
OUTPUT
3.0V
GND
10%
90%
10%
30 pF*
(a)
(b)
Fall Time: 1 V/ns
High-Z characteristics:
R1 317
3.3V
OUTPUT
5 pF
R2
351Ω
(c)
Notes
4. Tested initially and after any design or process changes that may affect these parameters.
5. AC characteristics (except High-Z) are tested using the load conditions shown in Figure (a). High-Z characteristics are tested for all speeds using the test load
shown in Figure (c).
Document #: 38-05481 Rev. *D
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