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CY62148ELL-45ZSXI 参数 Datasheet PDF下载

CY62148ELL-45ZSXI图片预览
型号: CY62148ELL-45ZSXI
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K的× 8 )静态RAM [4-Mbit (512 K × 8) Static RAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 14 页 / 407 K
品牌: CYPRESS [ CYPRESS SEMICONDUCTOR ]
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CY62148E MoBL
®
Document History Page
Document Title: CY62148E MoBL
®
4-Mbit (512 K × 8) Static RAM
Document Number: 38-05442
Revision
**
*A
ECN
201580
249276
Orig. of
Change
AJU
SYT
Submission
Date
01/08/04
See ECN
New datasheet
Changed from Advance Information to Preliminary
Moved Product Portfolio to Page 2
Added RTSOP II and Removed FBGA Package
Changed V
CC
stabilization time in footnote #7 from 100
μs
to 200
μs
Changed I
CCDR
from 2.0
μA
to 2.5
μA
Changed typo in Data Retention Characteristics(t
R
) from 100
μs
to t
RC
ns
Changed t
OHA
from 6 ns to 10 ns for both 35 ns and 45 ns Speed Bin
Changed t
HZOE
, t
HZWE
from 12 to 15 ns for 35 ns Speed Bin and 15 to 18 ns for 45
ns Speed Bin
Changed t
SCE
from 25 to 30 ns for 35 ns Speed Bin and 40 to 35 ns for 45 ns Speed
Bin
Changed t
HZCE
from 12 to18 ns for 35 ns Speed Bin and 15 to 22 ns for 45 ns
Speed Bin
Changed t
SD
from 15 to 18 ns for 35 ns Speed Bin and 20 to 22 ns for
45 ns Speed Bin
Changed t
DOE
from 15 to 18 ns for 35 ns Speed Bin
Corrected typo in Package Name
Changed Ordering Information to include Pb-free Packages
Changed from Preliminary to Final
Changed the address of Cypress Semiconductor Corporation on Page #1 from
“3901 North First Street” to “198 Champion Court”
Removed 35ns Speed Bin
Removed “L” version of CY62148E
Changed I
CC
(Typ) value from 1.5 mA to 2 mA at f=1 MHz
Changed I
CC
(Max) value from 2 mA to 2.5 mA at f=1 MHz
Changed I
CC
(Typ) value from 12 mA to 15 mA at f=f
max
Removed I
SB1
spec from the Electrical characteristics table
Changed I
SB2
Typ values from 0.7
μA
to 1
μA
and Max values from 2.5
μA
to 7
μA
Modified footnote #4 to include current limit
Removed redundant footnote on DNU pins
Changed the AC testload capacitance from 100 pF to 30 pF on page #4
Changed test load parameters R1, R2, R
TH
and V
TH
from 1838
Ω,
994
Ω,
645
Ω
and 1.75 V to 1800
Ω,
990
Ω,
639
Ω
and 1.77 V
Changed I
CCDR
from 2.5
μA
to 7
μA
Added I
CCDR
typical value
Changed t
LZOE
from 3 ns to 5 ns
Changed t
LZCE
and t
LZWE
from 6 ns to 10 ns
Changed t
HZCE
from 22 ns to 18 ns
Changed t
PWE
from 30 ns to 35 ns
Changed t
SD
from 22 ns to 25 ns
Updated the ordering information table and replaced Package Name column with
Package Diagram
Included Automotive Range in product offering
Updated the Ordering Information
Corrected the operating range to 4.5 V - 5.5 V on page# 3
Added footnote #8
Added V
IL
spec for SOIC package.
Description of Change
*B
414820
ZSD
See ECN
*C
*D
*E
464503
485639
833080
NXR
VKN
VKN
See ECN
See ECN
See ECN
Document #: 38-05442 Rev. *H
Page 12 of 14