D A T A S H E E T
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Test Conditions
VIN = VSS to VCC
Min
Typ
Max
Unit
,
ILI
Input Load Current
± 1.0
µA
VCC = VCC max
A9, OE#, RESET#
Input Load Current
VCC = VCC max;
A9, OE#, RESET# = 12.5 V
ILIT
50
± 1.0
40
µA
µA
VOUT = VSS to VCC
VCC = VCC max
,
ILO
Output Leakage Current
CE# = VIL, OE# = VIH,
f = 5 MHz, Byte Mode
20
28
30
0.3
VCC Active Read Current
(Notes 1, 2)
ICC1
mA
mA
CE# = VIL, OE# = VIH,
f = 5 MHz, Word Mode
50
VCC Active Write Current
(Notes 2, 3, 4)
ICC2
CE# = VIL, OE# = VIH
50
VCC Standby Current
(Notes 2, 5
ICC3
VIL
OE# = VIH, CE# and RESET# = VCC± 0.5 V
5
µA
V
Input Low Voltage
Input High Voltage
–0.5
0.8
0.7 x
VCC
VCC
+
VIH
V
0.3
Voltage for Autoselect and
Temporary Sector Unprotect
VID
VOL
VCC = 5.0 V
11.5
12.5
0.45
V
V
V
Output Low Voltage
IOL = 5.8 mA, VCC = VCC min
IOH = –2.5 mA, VCC = VCC min
0.85
VCC
VOH1
Output High Voltage
VCC–0.
4
VOH2
VLKO
IOH = –100 µA, VCC = VCC min
Low VCC Lock-Out Voltage
3.2
4.2
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax
.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Not 100% tested.
5. ICC3 = 20 µA max at extended temperature (>+85°±C).
24
Am29F400B
21505E8 November 11, 2009
CYPRESS [ CYPRESS ]
