D A T A S H E E T
DC CHARACTERISTICS
TTL/NMOS Compatible
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC max
± 1.0
µA
A9, OE#, RESET# Input Load
Current
VCC = VCC max;
A9, OE#, RESET# = 12.5 V
ILIT
ILO
50
± 1.0
40
µA
µA
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC max
CE# = VIL, OE# = VIH,
f = 5 MHz, Byte Mode
19
19
mA
VCC Active Read Current
(Notes 1, 2)
ICC1
CE# = VIL, OE# = VIH,
f = 5 MHz, Word Mode
50
60
mA
mA
VCC Active Write Current
(Notes 2, 3, 4)
ICC2
CE# = VIL, OE# = VIH
36
ICC3
VIL
VCC Standby Current (Note 2)
Input Low Voltage
CE#, RESET#, and OE# = VIH
0.4
1
mA
V
–0.5
2.0
0.8
VCC
+0.5
VIH
VID
Input High Voltage
V
V
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 5.0 V
11.5
12.5
0.45
VOL
VOH
VLKO
Output Low Voltage
IOL = 5.8 mA, VCC = VCC min
IOH = –2.5 mA, VCC = VCC min
V
V
V
Output High Voltage
Low VCC Lock-Out Voltage
2.4
3.2
4.2
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH..
2. Maximum ICC specifications are tested with VCC = VCCmax
.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Not 100% tested.
November 11, 2009 21505E8
Am29F400B
23
CYPRESS [ CYPRESS ]
