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C3M0021120D 参数 Datasheet PDF下载

C3M0021120D图片预览
型号: C3M0021120D
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide Power MOSFET C3MTM MOSFET Technology]
分类和应用:
文件页数/大小: 10 页 / 807 K
品牌: CREE [ CREE, INC ]
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Typical Performance  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
0
0
VGS = 0 V  
-40  
-80  
-120  
-160  
-200  
-40  
-80  
-120  
-160  
-200  
VGS = 5 V  
VGS = 5 V  
VGS = 0 V  
VGS = 10 V  
VGS = 15 V  
VGS = 10 V  
VGS = 15 V  
Conditions:  
TJ = 25 °C  
tp < 200 µs  
Conditions:  
TJ = -40 °C  
tp < 200 µs  
Drain-Source Voltage VDS (V)  
Drain-Source Voltage VDS (V)  
Figure 13. 3rd Quadrant Characteristic at -40 ºC  
Figure 14. 3rd Quadrant Characteristic at 25 ºC  
140  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
0
120  
100  
80  
60  
40  
20  
0
VGS = 0 V  
-40  
-80  
-120  
-160  
-200  
VGS = 5 V  
VGS = 10 V  
VGS = 15 V  
Conditions:  
TJ = 175 °C  
tp < 200 µs  
0
200  
400  
600  
800  
1000  
1200  
Drain to Source Voltage, VDS (V)  
Drain-Source Voltage VDS (V)  
Figure 15. 3rd Quadrant Characteristic at 175 ºC  
Figure 16. Output Capacitor Stored Energy  
10000  
10000  
1000  
100  
10  
Ciss  
Ciss  
1000  
100  
10  
Coss  
Coss  
Crss  
Crss  
Conditions:  
TJ = 25 °C  
Conditions:  
TJ = 25 °C  
VAC = 25 mV  
f = 100 kHz  
VAC = 25 mV  
f = 100 kHz  
1
1
0
50  
100  
150  
200  
0
200  
400  
600  
800  
1000  
1200  
Drain-Source Voltage, VDS (V)  
Drain-Source Voltage, VDS (V)  
Figure 17. Capacitances vs. Drain-Source  
Voltage (0 - 200V)  
Figure 18. Capacitances vs. Drain-Source  
Voltage (0 - 1000V)  
5
C3M0021120D Rev. -, 08-2019